2SA1208S-AE

1. PNP Configuration: The transistor operates in PNP configuration, making it suitable for use in complementary circuits.

2. High Gain: The device has a high current gain (hFE) of up to 300, which makes it suitable for use in small signal amplification circuits.

3. Low Noise: The 2SA1208S-AE transistor has a low noise level, making it ideal for use in low noise amplifier circuits.

4. High Breakdown Voltage: The transistor has a high breakdown voltage of up to -120V, which makes it ideal for use in high voltage circuits.

5. Maximum Continues Current: The device can handle a maximum continuous current (IC) of 1.5A, which makes it ideal for use in low current applications.

6. Avalanche Energy: The 2SA1208S transistor also has good avalanche energy characteristics, making it suitable for applications that require high speed switching.

7. Small Size: The device has a small size and can be mounted on a small PCB or a breadboard.

8. RoHS Compliant: The transistor is RoHS compliant, which means it does not contain any hazardous substances.

9. Wide Temperature Range: The device has a wide operating temperature range of -55°C to +150°C, which makes it suitable for use in extreme temperature environments.