2SB892S-AE

1. PNP Configuration: The transistor operates in PNP configuration, making it suitable for use in complementary circuits.

2. High Power: The device can handle a maximum power dissipation of 150W, which makes it ideal for use in power amplifier circuits.

3. High Current Capacity: The 2SB892S-AE transistor has a maximum collector current (IC) of 12A, which makes it suitable for use in high current applications.

4. High Gain: The device has a high current gain (hFE) of up to 180, which makes it suitable for use in small signal amplification circuits.

5. Low Saturation Voltage: The transistor has a low saturation voltage of 0.6V, which makes it suitable for use in switching applications.

6. Maximum Voltage: The device can handle a maximum voltage of 80V, which makes it suitable for use in high voltage applications.

7. Low Noise: The 2SB892S-AE transistor has a low noise level, which makes it suitable for use in low noise amplifier circuits.

8. Small Size: The device has a small size and can be mounted on a small PCB or a breadboard.

9. RoHS Compliant: The transistor is RoHS compliant, which means it does not contain any hazardous substances.

10. Wide Temperature Range: The device has a wide operating temperature range of -55°C to +150°C, which makes it suitable for use in extreme temperature environments.