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IR2015STRPBF
Features Of IR2015STRPBF
  • Floating channel designed for bootstrap operation Fully operational up to 150V

      Tolerant to negative transient voltage, dV/dt immune

  • Gate drive supply range from 5V to 20V

  • Undervoltage lockout

  • Internal recharge FET for bootstrap refresh

  • Internal deadtime of 11µs and 0.8µs

  • CMOS Schmitt-triggered input logic

  • Output out of phase with input

  • Reset input

  • Split pull-up and pull-down gate drive pins

  • Also available LEAD-FREE (PbF)

Details of IR2015STRPBF


Mos Transistor

The Mos Transistor

Mosfet



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