2SC5299

NPN bipolar junction transistor

Designed for high-power RF amplifier applications in the VHF/UHF frequency range

High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency

Rated for a maximum collector-emitter voltage (VCEO) of 400V and a maximum collector current (IC) of 15A

High current gain with low input impedance, making it suitable for use in amplifier circuits

Fast switching speed and high-frequency response, with a typical cutoff frequency of 650MHz

TO-3P package

Suitable for use in high-power RF amplifier circuits in applications such as wireless communication, broadcasting, and radar systems, among others.