FDMS3D5N08LC

Shielded Gate MOSFET Technology

Max r_DS(on) = 3.5 mΩ at V_GS = 10 V, I_D = 45 A

Max r_DS(on) = 5.1 mΩ at V_GS = 4.5 V, I_D = 36 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

100% UIL Tested

RoHS Compliant