2SC6104

NPN bipolar junction transistor

High-power RF transistor designed for use in RF and microwave power amplifier circuits

High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency

Rated for a maximum collector-emitter voltage (VCEO) of 65V and a maximum collector current (IC) of 12A

Designed for use at high frequencies with a typical cutoff frequency of 3GHz

High current gain with low input impedance, making it suitable for use in amplifier circuits

TO-220 package

Suitable for use in high-power RF and microwave amplifier circuits in applications such as wireless communication, radar systems, and electronic warfare, among others.