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LBAS70BST5G
Features Of LBAS70BST5G
  • Low forward voltage drop: The LBAS70BST5G is a Schottky diode that has a low forward voltage drop of 0.27V, making it ideal for low power applications.

  • High current density: This diode is designed to handle high current density, making it suitable for use in high-power applications.

  • Fast switching speed: With a fast switching speed, the LBAS70BST5G is suitable for use in high-speed circuits.

  • Small form factor: With a small form factor of 1mm x 0.6mm, this diode is ideal for applications where space is limited.

  • RoHS compliant: The LBAS70BST5G is RoHS compliant and free of hazardous materials.

  • Low reverse leakage current: This diode has a low reverse leakage current of less than 0.1µA, making it ideal for applications that require low power consumption.

  • High ESD resistance: The LBAS70BST5G has a high ESD resistance of up to 8kV, making it resistant to electrostatic discharge.

  • Wide temperature range: This diode can operate in a wide temperature range from -55°C to +150°C, making it suitable for use in harsh environments.

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