2SC3058

NPN bipolar junction transistor

High power RF transistor, commonly used in RF power amplifier circuits for mobile phones

High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency

Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA

Low-level input impedance and high-current gain

Fast switching speed and high-frequency response

TO-220 package

Suitable for use in a wide range of RF power amplifier applications, such as mobile phones, wireless communication devices, and other wireless applications.