2SC5047

NPN bipolar junction transistor

High-power RF transistor designed for use in RF power amplifier circuits

High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency

Rated for a maximum collector-emitter voltage (VCEO) of 250V and a maximum collector current (IC) of 5A

High current gain with low input impedance, making it suitable for use in amplifier circuits

Fast switching speed and high-frequency response, with a typical cutoff frequency of 900MHz

TO-220F package

Suitable for use in high-power RF amplifier circuits in applications such as wireless communication, broadcasting, and radar systems, among others.