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P1212AT Overview

The P1212AT is a P-channel MOSFET transistor designed for use in low voltage applications.

The P1212AT has a maximum drain-source voltage (Vds) rating of -20V and a continuous drain current (Id) of -12A. It also features a low on-resistance (Rds(on)) of approximately 22 milliohms at a 4.5V gate-source voltage (Vgs).

This MOSFET transistor is housed in a SOT-23 package, which is compact and suitable for use in space-constrained applications. The P1212AT is specifically designed for use in load switch and battery protection applications.

One of the key features of the P1212AT MOSFET transistor is its low on-resistance, which enables it to operate with low power loss and provide high efficiency. The P-channel configuration of this MOSFET is ideal for use in battery-efficient applications, such as battery protection circuits, portable devices, and other low voltage applications. 

Overall, the P1212AT MOSFET transistor is a compact, high-performance device suitable for low-voltage applications. Its low on-resistance, high current handling, and SOT-23 package make it ideal for use in battery protection circuits, portable devices, mobile phones, and similar applications that require battery efficiency and low power consumption.

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