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P2703BDG Overview

The P2703BDG is a Dual N-channel MOSFET transistor array designed for use in low-voltage applications. 

This MOSFET array includes two N-channel MOSFETs, each with a maximum drain-source voltage (Vds) rating of 30V and a continuous drain current (Id) rating of 4A. The MOSFETs have a low on-resistance (Rds(on)) of approximately 30 milliohms at a 10V gate-source voltage (Vgs). 

The MOSFET array is housed in a SO-8 package, which is compact and provides easy mounting. The P2703BDG is specifically designed for use in low-side switching applications. 

One of the key features of the P2703BDG MOSFET array is its low on-resistance, which enables it to operate with low power loss. Its low-voltage rating makes it ideal for use in low-voltage applications, such as portable devices and battery-powered applications. 

Overall, the P2703BDG MOSFET array is a compact, high-performance device suitable for low-side switching applications in low-voltage environments. Its low on-resistance and high current handling make it ideal for efficient power management in portable devices and battery-powered applications, among others.

Details of P2703BDG

Low Gate Voltage Mosfet

Low Threshold Voltage Mosfet

Low Gate Threshold Voltage Mosfet

Low Voltage High Current Mosfet

Ultra Low Threshold Voltage Mosfet

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