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P55N06L Overview

The P55N06L is a low-voltage N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for general-purpose switching applications. It is produced by STMicroelectronics, a semiconductor company based in Switzerland.

The P55N06L has a maximum drain-source voltage (Vds) rating of 60V, a maximum continuous drain current (Id) of 50A, and a low on-resistance (Rds(on)) of 18 mΩ at 10V gate-source voltage (Vgs). 

This MOSFET is housed in a TO-220 package that is popular and easy to mount. It is also offered in a DPAK package, which is smaller and space-efficient but may offer higher thermal resistance.

The P55N06L's low-voltage rating makes it ideal for use in low-voltage switching applications such as DC-DC converters, motor control, and power supplies. Its low on-resistance enables it to operate with a low voltage drop and helps minimize power loss in high-current applications. 

Overall, the P55N06L is a versatile MOSFET that is suitable for use in a wide range of low-voltage switching applications. Its high current, low on-resistance, and reduced power loss make it a popular choice among designers of power electronics circuits.

Details of P55N06L

Low Voltage Mosfet

Low Voltage Fet

Low Power Mosfets

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