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Features Of 2SC6104
  • NPN bipolar junction transistor

  • High-power RF transistor designed for use in RF and microwave power amplifier circuits

  • High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency

  • Rated for a maximum collector-emitter voltage (VCEO) of 65V and a maximum collector current (IC) of 12A

  • Designed for use at high frequencies with a typical cutoff frequency of 3GHz

  • High current gain with low input impedance, making it suitable for use in amplifier circuits

  • TO-220 package

  • Suitable for use in high-power RF and microwave amplifier circuits in applications such as wireless communication, radar systems, and electronic warfare, among others.

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