For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Lead free in comply with EU RoHS 2011/65/EU directives
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000V
Forward Current - 3A
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Lead free in comply with EU RoHS 2011/65/EU directives
Case: SMB
Terminals: Solderable per MIL-STD-750, Method 2026
Approx.Weight: 0.09g / 0.003oz
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20%.
Parameter | Symbols | S3AB | S388 | S3DB | S3GB | S3JB | S3KB | S3MB | Units |
Maximum Repetitive Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMs | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC Blocking Voltage | Voc | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Rectified Current | IF(av) | 3 | A | ||||||
Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load | IFSM | 90 | A | ||||||
Maximum Instantaneous Forward Voltage at 3 A | VF | 1.1 | V | ||||||
Maximum DC Reverse Current T₄=25℃ at Rated DC Blocking Voltage Ta=125°℃ | IR | 5 100 | μA | ||||||
Typical Junction Capacitance(1) | Cξ | 35 | pF | ||||||
Typical Thermal Resistance(2) | RθJA RθJC | 48 16 | °C/W | ||||||
Operating and Storage Temperature Range | Tj,Tstg | -55~+150 | °C |
(1)Measured at 1 MHz and applied reverse voltage of 4V D.C
(2)P.C.B. mounted with 2.0*X2.0*(5×5cm) copper pad areas.