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  • ESD03V32D-C ESD03V32D-C Ultra low leakage: nA levelOperating voltage: 3.3VLow clamping voltageComplies with following standards:– IEC 61000-4-2 (ESD) immunity testAir discharge: ±15kVContact discharge: ±8kV– IEC61000-4-4...
  • AT2659S AT2659S AT2659S is a low noise amplifier (LNA) chip with low power consumption, high gain and low noise figure, which supports L1 band multi-mode global satellite positioning and can be used in GNSS navigatio...
  • B1D02065E B1D02065E Extremely low reverse currentNo reverse recovery currentTemperature independent switchingPositive temperature coefficient on V FExcellent surge current capabilityLow capacitive charge
  • ADM2483BRWZ-REEL ADM2483BRWZ-REEL The ADM2483 differential bus transceiver is an integrated, galvanically isolated component designed for bidirectional data communication on balanced, multipoint bus transmission lines. It complies wit...
  • TPS74801DRCR TPS74801DRCR TPS74801DRCR OverviewTPS74801DRCR OverviewTPS74801DRCR OverviewTPS74801DRCR Overview
  • STM32F103RCT6 STM32F103RCT6 The STM32F103RCT6 is a 32-bit microcontroller unit (MCU) designed by STMicroelectronics. This MCU is based on an ARM Cortex-M3 processor and is intended for use in a wide range of embedded application...
  • BZX84B9V1LT1 BZX84B9V1LT1 Pb−Free Packages are Available225 mW Rating on FR−4 or FR−5 BoardZener Breakdown Voltage Range − 2.4 V to 75 VPackage Designed for Optimal Automated Board AssemblySmall Package Size for High Densi...
  • IRG4PC30S IRG4PC30S Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 I...
  • MDD1901RH MDD1901RH VDS = 100VID = 40A @VGS = 10VRDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V
  • 78M15/78M18  78M15/78M18  3-terminal voltage regulatorFixed Output Voltage: 15V/18VOperating Voltage Input Range: Up to 35VMaximum Output Current: 500mALow Dropout VoltageInternal Thermal Overload ProtectionShort Circuit Curre...
  • NVHL027N65S3F NVHL027N65S3F 700 V @TJ = 150°CTyp. RDS(on) = 21.5 mΩUltra Low Gate Charge (Typ. Qg = 227 nC)Low Effective Output Capacitance (Typ. Coss(eff.) = 1880 pF)100% Avalanche TestedAEC−Q101 Qualified and PPAP Capable
  • LK1305 LK1305
  • TIP107 TIP107 1. Power supplies: TIP107 can be used as a switch to control the flow of current in power supplies, making it an ideal choice for DC-DC converters, switching regulators, and battery chargers.2. Motor ...
  • 2SB892S-AE 2SB892S-AE 1. PNP Configuration: The transistor operates in PNP configuration, making it suitable for use in complementary circuits.2. High Power: The device can handle a maximum power dissipation of 150W, which...
  • SKW25N120 SKW25N120 SKW25N120 is a high voltage N-channel Fast-switching IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is a high-performance IGBT with a maximum voltage rating of 1200...
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