EN 
-
Products
- Application
- Company
-
Services
- Resources
- News
-
Contact Us
DAP222T1G
Fast trrLow CDNSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP CapableThese Devices are Pb−Free, Halogen Free/BFR Fre...
IR3541MTRPBF
5-phase dual output PWM ControllerPhases are flexibly assigned between Loops 1 & 2Intel VR12, AMD 400kHz & 3.4MHz SVI and Memory modesDual OCP support for I-spike enhanced AMD CPUsSMB_Alert ...
MDF10N65B
VDS = 650VID = 10.0A @VGS = 10VRDS(ON) ≤ 1.0Ω @VGS = 10V
78M05/78M12
3-terminal voltage regulatorFixed Output Voltage: 5V/12VInput Voltage Range: Up to 35VMaximum Output Current: 0.5ALow Dropout VoltageInternal Thermal Overload ProtectionShort Circuit Current Protectio...
NVHL040N65S3F
700 V @TJ = 150°CTyp. RDS(on) = 33.8 mΩUltra Low Gate Charge (Typ. Qg = 153 nC)Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF)100% Avalanche TestedAEC−Q101 Qualified and PPAP Capable
2SC3058
NPN bipolar junction transistorHigh power RF transistor, commonly used in RF power amplifier circuits for mobile phonesHigh back pressure triode designed to operate with high levels of back pressure, ...
TIP147
1. Power Amplifiers: TIP147 Darlington transistor is widely used as a power amplifier transistor in audio amplifiers, subwoofers, and other electronic devices.2. Motor Control: It is commonly used for...
2SA1208S-AE
1. PNP Configuration: The transistor operates in PNP configuration, making it suitable for use in complementary circuits.2. High Gain: The device has a high current gain (hFE) of up to 300, which make...
SKW15N60
SKW15N60 is a high voltage N-channel Fast-switching IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is a high-performance IGBT with a maximum voltage rating of 600V ...
SMBTA42
The SMBTA42 is a versatile triode transistor commonly used in a wide range of electronic applications. This NPN bipolar junction transistor is designed using planar technology, allowing for high-frequ...
BFP193 E6327
The BFP193 E6327 is a N-channel JFET (Junction Field Effect Transistor) transistor designed for high-frequency applications. It is manufactured by Infineon Technologies, a German semiconductor company...
STB20N65M5
Order codesVDS @ TJmaxRDS(on) maxIDSTB20N65M5710 V 0.19 Ω 18 ASTI20N65M5STP20N65M5STW20N65M5Worldwide best RDS(on) * areaHigher VDSS rating and high dv/dt capabilityExcellent switching performance100...
P3055E
The P3055E has a maximum drain-source voltage (Vds) rating of 60V, a maximum continuous drain current (Id) of 12A, and a low on-resistance (Rds(on)) of 0.16 ohms at a 10V gate-source voltage (Vgs). Th...
SIR186DP-T1-RE3
High voltage capability: SIR186DP-T1-RE3 is capable of operating at high voltage levels of up to 650V DC, making it suitable for use in high power applications.Low On-Resistance: The MOS transistor ha...
IR4428STRPBF
Gate drive supply range from 6 to 20VCMOS Schmitt-triggered inputsMatched propagation delay for both channelsOutputs out of phase with inputs (IR4426)Outputs in phase with inputs (IR4427)OutputA out o...
