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Switching Diode
A switching diode is a type of semiconductor device that is designed for use in high-speed switching applications. These diodes are optimized for fast switching with minimal reverse recovery time and low capacitance, making them ideal for use in digital circuits, pulse generators, and other high-frequency applications. Switching diodes offer fast and efficient switching coupled with low power consumption, and they are available in a variety of package sizes to fit different applications.
LR78M05D
Output Current up to 0.5AOutput Voltages of 5, 6, 8, 12, 15, 18, 24VThermal Overload ProtectionShort Circuit ProtectionOutput Transistor Safe Operating Area (SOA)Protection
IRSM836-044MA
Integrated gate drivers and bootstrap functionalityOpen-source for leg-shunt current sensingProtection shutdown pin Low R DS(on) Trench MOSFETUnder-voltage lockout for all channels Matched propagation...
MDF11N60
VDS = 600VVDS = 660V @TjmaxID = 11A @VGS = 10VRDS(ON) ≤ 0.55Ω @VGS = 10V
KIA7812AF
Internal Thermal Overload Protection.Internal Short Circuit Current Limiting.Output Current in Excess of 1A.Satisfies IEC-65 Specification. (International Electronical Commission).Package is DPAK, TO-...
NVHL025N65S3
High frequency capability: This triode is capable of operating at high frequencies of up to 6.5 GHz.Low input-output capacitance: This feature of NVHL025N65S3 helps in reducing signal distortion and e...
2SC6104
NPN bipolar junction transistorHigh-power RF transistor designed for use in RF and microwave power amplifier circuitsHigh back pressure triode designed to operate with high levels of back pressure, re...
TIP127
Collector-Emitter Sustaining Vortage-V
PN5138
1. NPN Configuration: The transistor operates in an NPN configuration and can amplify both analog and digital signals.2. High Current Gain: The device has a high current gain (hFE) of up to 400, which...
SGW25N120
SGW25N120 is a high voltage N-channel Dual IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is a high-performance IGBT with a maximum voltage rating of 1200V and a cu...
SS8050 Y1
The SS8050 Y1 is an NPN transistor that is designed for use in a wide range of electronic applications. This triode transistor features a high collector-emitter voltage rating of up to 25V, making it ...
FDMC86520L
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 AMax rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 ALow Profile - 1 mm max in Power 33100% UIL TestedRoHS Compliant
P2703BDG
The P2703BDG is a Dual N-channel MOSFET transistor array designed for use in low-voltage applications. This MOSFET array includes two N-channel MOSFETs, each with a maximum drain-source voltage (Vds) ...
FDMS3D5N08LC
Shielded Gate MOSFET TechnologyMax rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 45 AMax rDS(on) = 5.1 mΩ at VGS = 4.5 V, ID = 36 A50% Lower Qrr than Other MOSFET SuppliersLowers Switching Noise/EMIMSL1 Robu...
IR2015STRPBF
Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immuneGate drive supply range from 5V to 20VUndervoltage lockoutIntern...
