VHF100505H2N0STHigh self-resonant frequency.Multilayer monolithic construction yields high reliabilityExcellent solderability and heat resistance for either wave or reflow soldering.
MCM1012B900F06BPPowerful components with composite co-fired material to solve EMI problem for high speed differential signal transmission line as USB, and LVDS, without distortion to high speed signalb transmission.M...
LQW15AN10NH00DAll products in this catalogue comply with the EU ROHS Directive.The EU RoHS directive refers to the EU Directive 2011/65/EU on restricting the use of certain hazardous substances in electronic and el...
SDWL1608C15NJSTFHigh-Quality Material: The SDWL1608C15NJSTF inductor is made with high-quality materials, which makes it highly reliable and long-lasting.Compact Design: This inductor is designed to be small and comp...
FP6161-10S5GTRLow forward voltage: The FP6161-10S5GTR is a surface mount diode with a low forward voltage of 0.45V, making it suitable for low power applications.High current density: This diode is designed to hand...
LMSD103BT1GLow Forward Voltage Drop.Guard Ring Construction for Transient Protection.● Negligible Reverse Recovery Time● Low Reverse Capacitance● Also Available in Lead Free Version● We declare that the mate...
VO3023400 V blocking voltageIsolation test voltage, 5000 V RMS , t = 1 minMaterial categorization: for definitions of compliance please see www.vishay.com/doc?99912
1SMA11AT3GWorking Peak Reverse Voltage Range − 5.0 V to 78 VStandard Zener Breakdown Voltage Range − 6.7 V to 91.25 VPeak Power − 400 W @ 1 msESD Rating of Class 3 (> 16 kV) per Human Body ModelResponse T...
GBJ15AThin Single In-Line packageIdeal for printed circuit boardsGlass passivated chip junctionHigh surge current capabilityHigh case dielectric strength of 2500 V RMSPlastic package has Underwriters Labora...
LESD11D3.3CT5GSmall Body Outline Dimensions:0.61 mm x 0.31 mml Low Body Height: 0.28 mml Low Leakagel Response Time is Typically < 1 nsl ESD Rating of Class 3 (> 16 kV) per Human BodyModell IEC61000−4−2 Lev...
DHG10I600PAPlanar passivated chipsVery low leakage currentVery short recovery timeImproved thermal behaviourVery low Irm-valuesVery soft recovery behaviourAvalanche voltage rated for reliable operationSoft rever...
MUR460Ultrafast reverse recovery timeLow leakage currentLow switching losses, high efficiencyHigh forward surge capabilityGlass passivated chip junctionSolder dip 275 °C max. 7 s, per JESD 22-B106
SSM3J108TUV th can be expressed as the voltage between gate and source when the low operating current value is I D =−1mA for this product. For normal switching operation, V GS (on) requires a higher voltage th...