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  • LQCBMF1608T4R7M LQCBMF1608T4R7M Item Summary4.7uH±20%, 0.145A, 0603/1608 (EIA/JIS)Lifecycle StageNew PN availableStandard packaging quantity (minimum)Taping Embossed 3000pcs
  • VHF100505H2N0ST VHF100505H2N0ST High self-resonant frequency.Multilayer monolithic construction yields high reliabilityExcellent solderability and heat resistance for either wave or reflow soldering.
  • MCM1012B900F06BP MCM1012B900F06BP Powerful components with composite co-fired material to solve EMI problem for high speed differential signal transmission line as USB, and LVDS, without distortion to high speed signalb transmission.M...
  • LQW15AN10NH00D LQW15AN10NH00D All products in this catalogue comply with the EU ROHS Directive.The EU RoHS directive refers to the EU Directive 2011/65/EU on restricting the use of certain hazardous substances in electronic and el...
  • SDWL1608C15NJSTF SDWL1608C15NJSTF High-Quality Material: The SDWL1608C15NJSTF inductor is made with high-quality materials, which makes it highly reliable and long-lasting.Compact Design: This inductor is designed to be small and comp...
  • FP6161-10S5GTR FP6161-10S5GTR Low forward voltage: The FP6161-10S5GTR is a surface mount diode with a low forward voltage of 0.45V, making it suitable for low power applications.High current density: This diode is designed to hand...
  • LMSD103BT1G LMSD103BT1G Low Forward Voltage Drop.Guard Ring Construction for Transient Protection.● Negligible Reverse Recovery Time● Low Reverse Capacitance● Also Available in Lead Free Version● We declare that the mate...
  • VO3023 VO3023 400 V blocking voltageIsolation test voltage, 5000 V RMS , t = 1 minMaterial categorization: for definitions of compliance please see www.vishay.com/doc?99912
  • 1N4148WS-V-GS08 1N4148WS-V-GS08 Silicon epitaxial planar diodeFast switching diodesAEC-Q101 qualified availableBase P/N-E3 - RoHS-compliant, commercial gradeBase P/N-HE3 - RoHS-compliant, AEC-Q101 qualifiedMaterial categorization: f...
  • 1SMA11AT3G 1SMA11AT3G Working Peak Reverse Voltage Range − 5.0 V to 78 VStandard Zener Breakdown Voltage Range − 6.7 V to 91.25 VPeak Power − 400 W @ 1 msESD Rating of Class 3 (> 16 kV) per Human Body ModelResponse T...
  • GBJ15A GBJ15A Thin Single In-Line packageIdeal for printed circuit boardsGlass passivated chip junctionHigh surge current capabilityHigh case dielectric strength of 2500 V RMSPlastic package has Underwriters Labora...
  • LESD11D3.3CT5G LESD11D3.3CT5G Small Body Outline Dimensions:0.61 mm x 0.31 mml Low Body Height: 0.28 mml Low Leakagel Response Time is Typically < 1 nsl ESD Rating of Class 3 (> 16 kV) per Human BodyModell IEC61000−4−2 Lev...
  • DHG10I600PA DHG10I600PA Planar passivated chipsVery low leakage currentVery short recovery timeImproved thermal behaviourVery low Irm-valuesVery soft recovery behaviourAvalanche voltage rated for reliable operationSoft rever...
  • MUR460 MUR460 Ultrafast reverse recovery timeLow leakage currentLow switching losses, high efficiencyHigh forward surge capabilityGlass passivated chip junctionSolder dip 275 °C max. 7 s, per JESD 22-B106
  • SSM3J108TU SSM3J108TU V th can be expressed as the voltage between gate and source when the low operating current value is I D =−1mA for this product. For normal switching operation, V GS (on) requires a higher voltage th...
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