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• ADUM1210BRZ ADUM1210BRZ OverviewADUM1210BRZ OverviewADUM1210BRZ OverviewADUM1210BRZ Overview
• TPS63900DSKR TPS63900DSKR OverviewTPS63900DSKR OverviewTPS63900DSKR OverviewTPS63900DSKR Overview
• STM32F103C8T6 ARM® Cortex®-M3 core with embedded Flash and SRAMThe ARM® Cortex®-M3 processor is the latest generation of ARM processors for embedded systems. It has been developed to provide a low-cost platform...
• ATL431AQDBZR Texas Instruments ATL431AQDBZR technical specifications, attributes, and parameters. V-Ref Adjustable/Precision 2.5V to 36V 100mA 3-Pin SOT-23 T/R. 2.5-V low-IQ adjustable precision shunt regulator 3-...
• IRFP440 Dynamic dV/dt RatingRepetitive Avalanche RatedIsolated Central Mounting HoleFast SwitchingEase of ParallelingSimple Drive RequirementsCompliant to RoHS Directive 2002/95/EC
• MC79M05CT No External Components RequiredInternal Thermal Overload ProtectionInternal Short Circuit Current LimitingOutput Transistor Safe−Area CompensationAlso Available in Surface Mount DPAK (DT) PackagePb−...
• FHP30100A 3-terminal voltage regulatorOutput voltage: 10VInput voltage: 35V max.Maximum Output Current: 1ADropout Voltage: 1.7V typ. (@ 0.5A)Low Output Noise VoltageThermal ProtectionShort Circuit ProtectionTO-...
• NVHL020N090SC1 Typ. RDS(on) = 20 mΩUltra Low Gate Charge (typ. QG(tot) = 196 nC)Low Effective Output Capacitance (typ. Coss = 296 pF)100% UIL TestedQualified According to AEC−Q101RoHS Compliant
• LK1306 High power output: The LK1306 triode provides high power output which makes it suitable for use in high-power transmitting applications.High frequency capability: It offers high-frequency operation of...
• TIP102 Designed for general-purpose amplifier and low-speed switching applications
• 2N3904RLRAH 1. NPN Configuration: The transistor operates in NPN configuration and can amplify both analog and digital signals.2. Low Power: The device is designed to operate at low power and can handle a maximum...
• STGF19NC60KD The STGF19NC60KD is a power IGBT transistor manufactured by STMicroelectronics. It is a high-performance device with a voltage rating of 600V and a current rating of 30A. The transistor is designed fo...
• SMBT3906 The SMBT3906 is a general-purpose triode transistor designed for use in a wide variety of electronic applications. This bipolar junction transistor features a small signal current gain range of 100 to...
• BCV62B The BCV62B is a JFET (junction field-effect transistor) that is designed for use in a range of electronic applications. This N-channel JFET features a low noise figure, high transconductance, and high...
• FDS4410A 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V RDS(ON) = 20 mΩ @ VGS = 4.5 VFast switching speedLow gate chargeHigh performance trench technology for extremely low RDS(ON...