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• SF52 High reliabilityLow leakageLow forward voltageHigh current capabilitySuper fast switching speedHigh surge capabilityGood for switching mode circuit
• DMP3120L-7 Low On-Resistance: R DS(ON) < 120mΩ @ V GS = -4.5V R DS(ON) < 240mΩ @ V GS = -2.5VLow Gate Threshold VoltageLow Input CapacitanceFast Switching SpeedLow Input/Output LeakageTotally L...
• B1D06065E Switch Mode Power Supplies (SMPS)Uninterruptable power suppliesMotor DriversPower Factor Correction
• AS3933-BTST AS3933-BTST OverviewAS3933-BTST OverviewAS3933-BTST OverviewAS3933-BTST Overview
• TPA6112A2DGQR OUTPUT COUPLING CAPACITOR, C(C)In a typical single-supply, single-ended (SE) configur- ation, an output coupling capacitor (C(C)) is required to block the dc bias at the output of the amplifier, thus ...
• STC8F2K16S2-28I-L The STC8F2K16S2-28I-L is an 8-bit microcontroller unit (MCU) designed and manufactured by STC Microelectronics. This MCU is based on the popular 8051 architecture and is designed for use in low-power ...
• LR78M05D Output Current up to 0.5AOutput Voltages of 5, 6, 8, 12, 15, 18, 24VThermal Overload ProtectionShort Circuit ProtectionOutput Transistor Safe Operating Area (SOA)Protection
• IRSM836-044MA Integrated gate drivers and bootstrap functionalityOpen-source for leg-shunt current sensingProtection shutdown pin Low R DS(on) Trench MOSFETUnder-voltage lockout for all channels Matched propagation...
• MDF11N60 VDS = 600VVDS = 660V @TjmaxID = 11A @VGS = 10VRDS(ON) ≤ 0.55Ω @VGS = 10V
• KIA7812AF Internal Thermal Overload Protection.Internal Short Circuit Current Limiting.Output Current in Excess of 1A.Satisfies IEC-65 Specification. (International Electronical Commission).Package is DPAK, TO-...
• NVHL025N65S3 High frequency capability: This triode is capable of operating at high frequencies of up to 6.5 GHz.Low input-output capacitance: This feature of NVHL025N65S3 helps in reducing signal distortion and e...
• 2SC6104 NPN bipolar junction transistorHigh-power RF transistor designed for use in RF and microwave power amplifier circuitsHigh back pressure triode designed to operate with high levels of back pressure, re...
• TIP127 Collector-Emitter Sustaining Vortage-V
• PN5138 1. NPN Configuration: The transistor operates in an NPN configuration and can amplify both analog and digital signals.2. High Current Gain: The device has a high current gain (hFE) of up to 400, which...
• SGW25N120 SGW25N120 is a high voltage N-channel Dual IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is a high-performance IGBT with a maximum voltage rating of 1200V and a cu...