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• SF14 High current capability,Low forward voltage dropLow power loss, high efficiencyHigh surge capabilityHigh temperature soldering guaranteed 260°C /10sec/ 0.375" lead length at 5 lbs tensionSuper f...
• PLR0524P Compatible with IEC 61000-4-2 (ESD): Air - 15kV, Contact - 8kVCompatible with IEC 61000-4-4 (EFT): 40A - 5/50nsCompatible with IEC 61000-4-5 (Lightning): 4A - 8/20µsESD Protection > 25 kilovolts60...
• B1D04065E Essentially No switching lossesSystem efficiency improvement over Si DiodesIncreased power densityEnabling higher switching frequencyReduction of Heat Sink RequirementsSystem Cost savings due to small...
• SN74LVC07AD SN74LVC07AD OverviewSN74LVC07AD OverviewSN74LVC07AD OverviewSN74LVC07AD Overview
• TPS56637RPAR TPS56637RPAR OverviewTPS56637RPAR OverviewTPS56637RPAR OverviewTPS56637RPAR Overview
• STM8S003F3P6 The following section intends to give an overview of the basic features of the STM8S003F3/K3 value line functional modules and peripherals. For more detailed information please refer to the correspond...
• DAP222T1G Fast trrLow CDNSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP CapableThese Devices are Pb−Free, Halogen Free/BFR Fre...
• IR3541MTRPBF 5-phase dual output PWM ControllerPhases are flexibly assigned between Loops 1 & 2Intel VR12, AMD 400kHz & 3.4MHz SVI and Memory modesDual OCP support for I-spike enhanced AMD CPUsSMB_Alert ...
• MDF10N65B VDS = 650VID = 10.0A @VGS = 10VRDS(ON) ≤ 1.0Ω @VGS = 10V
• 78M05/78M12 3-terminal voltage regulatorFixed Output Voltage: 5V/12VInput Voltage Range: Up to 35VMaximum Output Current: 0.5ALow Dropout VoltageInternal Thermal Overload ProtectionShort Circuit Current Protectio...
• NVHL040N65S3F 700 V @TJ = 150°CTyp. RDS(on) = 33.8 mΩUltra Low Gate Charge (Typ. Qg = 153 nC)Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF)100% Avalanche TestedAEC−Q101 Qualified and PPAP Capable
• 2SC3058 NPN bipolar junction transistorHigh power RF transistor, commonly used in RF power amplifier circuits for mobile phonesHigh back pressure triode designed to operate with high levels of back pressure, ...
• TIP147 1. Power Amplifiers: TIP147 Darlington transistor is widely used as a power amplifier transistor in audio amplifiers, subwoofers, and other electronic devices.2. Motor Control: It is commonly used for...
• 2SA1208S-AE 1. PNP Configuration: The transistor operates in PNP configuration, making it suitable for use in complementary circuits.2. High Gain: The device has a high current gain (hFE) of up to 300, which make...
• SKW15N60 SKW15N60 is a high voltage N-channel Fast-switching IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is a high-performance IGBT with a maximum voltage rating of 600V ...