1SMA11AT3GWorking Peak Reverse Voltage Range − 5.0 V to 78 VStandard Zener Breakdown Voltage Range − 6.7 V to 91.25 VPeak Power − 400 W @ 1 msESD Rating of Class 3 (> 16 kV) per Human Body ModelResponse T...
GBJ15AThin Single In-Line packageIdeal for printed circuit boardsGlass passivated chip junctionHigh surge current capabilityHigh case dielectric strength of 2500 V RMSPlastic package has Underwriters Labora...
LESD11D3.3CT5GSmall Body Outline Dimensions:0.61 mm x 0.31 mml Low Body Height: 0.28 mml Low Leakagel Response Time is Typically < 1 nsl ESD Rating of Class 3 (> 16 kV) per Human BodyModell IEC61000−4−2 Lev...
DHG10I600PAPlanar passivated chipsVery low leakage currentVery short recovery timeImproved thermal behaviourVery low Irm-valuesVery soft recovery behaviourAvalanche voltage rated for reliable operationSoft rever...
MUR460Ultrafast reverse recovery timeLow leakage currentLow switching losses, high efficiencyHigh forward surge capabilityGlass passivated chip junctionSolder dip 275 °C max. 7 s, per JESD 22-B106
SSM3J108TUV th can be expressed as the voltage between gate and source when the low operating current value is I D =−1mA for this product. For normal switching operation, V GS (on) requires a higher voltage th...
PIC16F1936-IThe PIC16(L)F1934/6/7 are described within this datasheet. They are available in 28/40/44-pin packages. Figure 1-1 shows a block diagram of the PIC16(L)F1934/6/7 devices. Table 1-2 shows the pinout d...
LTL431APTLT1GProgrammable output Voltage to 36V.Low dynamic output impedance 0.2QSink current capability of 1 to 100mA.Equivalent full-range temperature coefficient of 50ppm/°Ctypical for operation over full rate...
2SC2371High power handling capability: The 2SC2371 is a power triode that can handle high power up to 20W, making it suitable for use in high-power applications.High voltage rating: This triode has a high vo...
MDF12N50N-channel MOSFET transistorVoltage Rating: Drain-to-Source Voltage (VDS) of 500VCurrent Rating: Continuous Drain Current (ID) of 12ALow On-Resistance: RDS(on) of 1.2 ohms at VGS=10VFast Switching: Low...
KIA7805AInternal Thermal Overload Protection.Internal Short Circuit Current Limiting.Output Current in Excess of 1A.Satisfies IEC-65 Specification. (International Electronical Commission).Package is DPAK, TO-...
2SC3550NPN bipolar junction transistorHigh-power RF transistor designed for use in RF power amplifier circuitsHigh back pressure triode designed to operate with high levels of back pressure, resulting in hig...