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  • 1N4148WS-V-GS08 1N4148WS-V-GS08 Silicon epitaxial planar diodeFast switching diodesAEC-Q101 qualified availableBase P/N-E3 - RoHS-compliant, commercial gradeBase P/N-HE3 - RoHS-compliant, AEC-Q101 qualifiedMaterial categorization: f...
  • 1SMA11AT3G 1SMA11AT3G Working Peak Reverse Voltage Range − 5.0 V to 78 VStandard Zener Breakdown Voltage Range − 6.7 V to 91.25 VPeak Power − 400 W @ 1 msESD Rating of Class 3 (> 16 kV) per Human Body ModelResponse T...
  • GBJ15A GBJ15A Thin Single In-Line packageIdeal for printed circuit boardsGlass passivated chip junctionHigh surge current capabilityHigh case dielectric strength of 2500 V RMSPlastic package has Underwriters Labora...
  • LESD11D3.3CT5G LESD11D3.3CT5G Small Body Outline Dimensions:0.61 mm x 0.31 mml Low Body Height: 0.28 mml Low Leakagel Response Time is Typically < 1 nsl ESD Rating of Class 3 (> 16 kV) per Human BodyModell IEC61000−4−2 Lev...
  • DHG10I600PA DHG10I600PA Planar passivated chipsVery low leakage currentVery short recovery timeImproved thermal behaviourVery low Irm-valuesVery soft recovery behaviourAvalanche voltage rated for reliable operationSoft rever...
  • MUR460 MUR460 Ultrafast reverse recovery timeLow leakage currentLow switching losses, high efficiencyHigh forward surge capabilityGlass passivated chip junctionSolder dip 275 °C max. 7 s, per JESD 22-B106
  • SSM3J108TU SSM3J108TU V th can be expressed as the voltage between gate and source when the low operating current value is I D =−1mA for this product. For normal switching operation, V GS (on) requires a higher voltage th...
  • B1D08065E B1D08065E Pin1-CathodePin2-CathodePin3-Anode
  • TPS92692QPWPRQ1 TPS92692QPWPRQ1 TPS92692QPWPRQ1 OverviewTPS92692QPWPRQ1 OverviewTPS92692QPWPRQ1 OverviewTPS92692QPWPRQ1 Overview
  • PIC16F1936-I PIC16F1936-I The PIC16(L)F1934/6/7 are described within this datasheet. They are available in 28/40/44-pin packages. Figure 1-1 shows a block diagram of the PIC16(L)F1934/6/7 devices. Table 1-2 shows the pinout d...
  • LTL431APTLT1G LTL431APTLT1G Programmable output Voltage to 36V.Low dynamic output impedance 0.2QSink current capability of 1 to 100mA.Equivalent full-range temperature coefficient of 50ppm/°Ctypical for operation over full rate...
  • 2SC2371 2SC2371 High power handling capability: The 2SC2371 is a power triode that can handle high power up to 20W, making it suitable for use in high-power applications.High voltage rating: This triode has a high vo...
  • MDF12N50 MDF12N50 N-channel MOSFET transistorVoltage Rating: Drain-to-Source Voltage (VDS) of 500VCurrent Rating: Continuous Drain Current (ID) of 12ALow On-Resistance: RDS(on) of 1.2 ohms at VGS=10VFast Switching: Low...
  • KIA7805A KIA7805A Internal Thermal Overload Protection.Internal Short Circuit Current Limiting.Output Current in Excess of 1A.Satisfies IEC-65 Specification. (International Electronical Commission).Package is DPAK, TO-...
  • 2SC3550 2SC3550 NPN bipolar junction transistorHigh-power RF transistor designed for use in RF power amplifier circuitsHigh back pressure triode designed to operate with high levels of back pressure, resulting in hig...
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