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• TIP142 Collector-Emitter Sustaining Vortage-VCEO(SUS) =60 V (Min) -TIP140, TIP145 =80 V (Min) -TIP141, TIP146 =100 V (Min) -TIP142, TIP147Collector-Emitter Saturat...
• SS8550CBU 1. PNP Configuration: The transistor operates in a PNP configuration, making it suitable for use in complementary circuits.2. High Current Gain: The device has a high current gain (hFE) of up to 700, ...
• IKQ120N60T IKQ120N60T is a high-voltage N-channel fast-switching IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. It is a high-performance IGBT with a maximum voltage rating of 600V and curre...
• PZT2222A-TP The PZT2222A-TP is a popular NPN bipolar junction transistor that is designed for use in a wide variety of electronic applications. This general-purpose triode transistor offers a high maximum collect...
• P1212AT The P1212AT is a P-channel MOSFET transistor designed for use in low voltage applications.The P1212AT has a maximum drain-source voltage (Vds) rating of -20V and a continuous drain current (Id) of -12...
• TPS92662AQPHPRQ1 TPS92662AQPHPRQ1 OverviewTPS92662AQPHPRQ1 OverviewTPS92662AQPHPRQ1 OverviewTPS92662AQPHPRQ1 Overview
• STC89C52RC-40I-PDIP40 The STC89C52RC-40I-PDIP40 is an 8-bit microcontroller unit (MCU) designed and manufactured by STC Microelectronics. This MCU is based on the popular 8051 architecture and is designed for use in a wide...
• LR1117CD33X Other than a fixed version and an adjustableversion, output value can be customized ondemand.Maximum output current is 1ARange of operation input voltage: Max 12V Standby current: 2mA (typ.) Line regu...
• 2SD1590 High power handling capability: The 2SD1590 is a power triode that can handle high power up to 150W, making it suitable for use in high-power applications.High voltage rating: This triode has a high v...
• MDF13N50BTH N-channel MOSFET switching transistorDrain-to-Source Voltage (VDS) rating of 500VContinuous Drain Current (ID) of 13ALow On-Resistance (RDS) of 0.39 ohms at VGS=10VFast Switching: Low gate charge (Qg)...
• 2SC5047 NPN bipolar junction transistorHigh-power RF transistor designed for use in RF power amplifier circuitsHigh back pressure triode designed to operate with high levels of back pressure, resulting in hig...
• TIP115 Collector-Emitter Sustaining Vortage-VCEO(SUS) =60 V (Min) -TIP110, TIP115 =80 V (Min) -TIP111, TIP116 =100 V (Min) -TIP112, TIP117Collector-Emitter Saturat...
• SS8550DTA 1. PNP Configuration: The transistor operates in a PNP configuration, making it suitable for use in complementary circuits.2. High Current Gain: The device has a high current gain (hFE) of up to 1200,...
• NGTB25N120FL2WG NGTB25N120FL2WG is a high voltage N-channel Fast-switching IGBT (Insulated Gate Bipolar Transistor) manufactured by ON Semiconductor. It is a high-performance IGBT with a maximum voltage rating of 1.2...
• PZTA42 The PZTA42 is a high-performance, general-purpose NPN bipolar junction transistor that is commonly used in electronic applications. It features a small signal current gain range of 100 to 400 and a ma...