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P1203BD8
The P1203BD8 is a dual N-channel MOSFET transistor array designed for use in low-voltage applications. The P1203BD8 consists of two N-channel MOSFETs, each having a maximum drain-source voltage (Vds) ...
R5F100FEAFP#10
Ultra-Low Power Technology• 1.6 V to 5.5 V operation from a single supply• Stop (RAM retained): 0.23 µA, (LVD enabled): 0.31 µA• Halt (RTC + LVD): 0.57 µA• Snooze: 0.70 mA (UART), 1.20 mA (ADC)...
LMBTA42LT1G
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.CONTROLLING DIMENSION: INCH.
2SD1894
High power handling capability: The 2SD1894 is a power triode that can handle high power up to 120W, making it suitable for use in high-power applications.High voltage rating: This triode has a high v...
MDF13N65B
N-channel MOSFET switching transistorVoltage Rating: Drain-to-Source Voltage (VDS) of 650VCurrent Rating: Continuous Drain Current (ID) of 13ALow On-Resistance: RDS(on) of 0.33 ohms at VGS=10VFast Swi...
BU911
NPN bipolar junction transistorHigh-power switching transistor, designed for use in industrial and automotive applicationsRated for a maximum collector-emitter voltage (VCEO) of 400V and a maximum col...
TIP132
Collector-Emitter Sustaining Vortage-VCEO(SUS) =60 V (Min) -TIP130, TIP135 =80 V (Min) -TIP131, TIP136 =100 V (Min) -TIP132, TIP137Collector-Emitter Saturat...
DTC124EETL
Built-In Biasing Resistors, R 1 = R 2 = 22kW.Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).The bias resistors ...
NTLUS3A90PZTAG
NTLUS3A90PZTAG is a high voltage N-channel enhancement mode Power MOSFET manufactured by ON Semiconductor. It is a high-performance MOSFET with a voltage rating of 900V and a current rating of 3A.The ...
PZTA14
The PZTA14 is an NPN bipolar transistor designed for use in a wide range of electronic applications. This general-purpose triode features a small signal current gain range of 120 to 380 and a maximum ...
P117AAT
The P117AAT is a low voltage MOS transistor designed for use in low voltage applications like battery-powered systems, portable devices, and other low voltage circuits. It offers a high level of relia...
MIC5235YM5-TR
Wide input voltage range: 2.3V to 24VUltra low ground current: 18µALow dropout voltage: 310mV at 150mAHigh output accuracy: ±2.0% over temperatureµCap: stable with ceramic or tantalum capacitorsExc...
NGTB40N120FL2WG
NGTB40N120FL2WG is a high voltage N-channel Fast-switching IGBT (Insulated Gate Bipolar Transistor) manufactured by ON Semiconductor. It is a high-performance IGBT with a maximum voltage rating of 1.2...
KTC9012S-H-RTK/P
The KTC9012S-H-RTK/P is an NPN bipolar junction transistor designed for use in a wide range of electronic applications. This general-purpose triode features a small signal current gain range of 200 to...
BZX384-B5V1
Total power dissipation: ≤300 mWThree tolerance series: ±1 %, ±2 % and approximately ±5 %Working voltage range: nominal 2.4 V to 75 V (E24 range)Non-repetitive peak reverse power dissipation: ≤ 4...
